Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy
by Michael R. Hogsed
| Publisher: | Unknown |
| Published In: | 26-Oct-2012 |
| ISBN-10: | 1286861233 |
| ISBN-13: | 9781286861233 |
| Binding Type: | Paperback |
| Weight: | 442 gms |
| Pages: | pp. 208, 50:B&W 7.44 x 9.69 in or 246 x 189 mm (Crown 4vo) Perfect Bound on White w/Gloss |
The Title "Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy" is written by Michael R. Hogsed. This book was published in the year 2620. The ISBN number 1286861233|9781286861233 is assigned to the Paperback version of this title. This book has total of pp. 208 (Pages). The publisher of this title is Unknown. Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy is currently Not Available with us.You can enquire about this book and we will let you know the availability.