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Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy.

by  Daniel D Billingsley
Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy.,1244599239,9781244599239

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Book Information

Publisher:Unknown
Published In:30-Sep-2011
ISBN-10:1244599239
ISBN-13:9781244599239
Binding Type:Paperback
Weight:496 gms
Pages:pp. 214

The Title "Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy." is written by Daniel D Billingsley. This book was published in the year 3020. The ISBN number 1244599239|9781244599239 is assigned to the Paperback version of this title. This book has total of pp. 214 (Pages). The publisher of this title is Unknown. Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy. is currently Not Available with us.You can enquire about this book and we will let you know the availability.