Process development and device characteristics of aluminum gallium nitride/gallium nitride HEMTs for high frequency applications.
by Dong Hyun Kim
| Publisher: | Unknows |
| Published In: | 10-Sep-2011 |
| ISBN-10: | 1243957905 |
| ISBN-13: | 9781243957900 |
| Binding Type: | Paperback |
| Weight: | 294 gms |
| Pages: | pp. 122, 50:B&W 7.44 x 9.69 in or 246 x 189 mm (Crown 4vo) Perfect Bound on White w/Gloss |
The Title "Process development and device characteristics of aluminum gallium nitride/gallium nitride HEMTs for high frequency applications." is written by Dong Hyun Kim. This book was published in the year 1020. The ISBN number 1243957905|9781243957900 is assigned to the Paperback version of this title. This book has total of pp. 122 (Pages). The publisher of this title is Unknows. Process development and device characteristics of aluminum gallium nitride/gallium nitride HEMTs for high frequency applications. is currently Not Available with us.You can enquire about this book and we will let you know the availability.